1SS307(TE85L,F)

Toshiba Semiconductor and Storage

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1SS307(TE85L,F)

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Package:

S-Mini

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Description:

DIODE GEN PURP 30V 100MA S-MINI

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Mfr	Toshiba Semiconductor and Storage
Speed	Small Signal =< 200mA (Io), Any Speed
Series	-
Package	Tape & Reel (TR)
Technology	Standard
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Active
Base Product Number	1SS307
Capacitance @ Vr, F	6pF @ 0V, 1MHz
Supplier Device Package	S-Mini
Current - Reverse Leakage @ Vr	10 nA @ 30 V
Voltage - DC Reverse (Vr) (Max)	30 V
Current - Average Rectified (Io)	100mA
Operating Temperature - Junction	125°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 100 mA