2N7635-GA
GeneSiC Semiconductor
Product No:
2N7635-GA
Manufacturer:
Package:
TO-257
Batch:
-
Datasheet:
-
Description:
TRANS SJT 650V 4A TO257
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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Product Information
Parameter Info
User Guide
| Mfr | GeneSiC Semiconductor |
| Series | - |
| Package | Bulk |
| FET Type | - |
| Vgs (Max) | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | - |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| Power Dissipation (Max) | 47W (Tc) |
| Supplier Device Package | TO-257 |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 35 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
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