ALD212900APAL

Advanced Linear Devices Inc.

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ALD212900APAL

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Package:

8-PDIP

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Description:

MOSFET 2N-CH 10.6V 0.08A 8DIP

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Mfr	Advanced Linear Devices Inc.
Series	EPAD®, Zero Threshold™
Package	Tube
Technology	MOSFET (Metal Oxide)
FET Feature	Logic Level Gate
Power - Max	500mW
Configuration	2 N-Channel (Dual) Matched Pair
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Product Status	Active
Vgs(th) (Max) @ Id	10mV @ 20µA
Base Product Number	ALD212900
Operating Temperature	0°C ~ 70°C (TJ)
Rds On (Max) @ Id, Vgs	14Ohm
Supplier Device Package	8-PDIP
Gate Charge (Qg) (Max) @ Vgs	-
Drain to Source Voltage (Vdss)	10.6V
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 5V
Current - Continuous Drain (Id) @ 25°C	80mA