APT10M11B2VFRG

Microsemi Corporation

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APT10M11B2VFRG

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Package:

T-MAX™

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Description:

MOSFET N-CH 100V 100A T-MAX

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Mfr	Microsemi Corporation
Series	POWER MOS V®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 2.5mA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	11mOhm @ 500mA, 10V
Power Dissipation (Max)	520W (Tc)
Supplier Device Package	T-MAX™
Gate Charge (Qg) (Max) @ Vgs	450 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	10300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)