APTM100DA18CT1G
Microsemi Corporation
Product No:
APTM100DA18CT1G
Manufacturer:
Package:
SP1
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 1000V 40A SP1
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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Product Information
Parameter Info
User Guide
| Mfr | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 216mOhm @ 33A, 10V |
| Power Dissipation (Max) | 657W (Tc) |
| Supplier Device Package | SP1 |
| Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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