BSC091N03MSCGATMA1

Infineon Technologies

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BSC091N03MSCGATMA1

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Package:

PG-TDSON-8-6

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	9.1mOhm @ 30A, 10V
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Supplier Device Package	PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 44A (Tc)