CSD25213W10

Texas Instruments

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CSD25213W10

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Package:

4-DSBGA (1x1)

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Description:

MOSFET P-CH 20V 1.6A 4DSBGA

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Mfr	Texas Instruments
Series	NexFET™
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	-6V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	4-UFBGA, DSBGA
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 250µA
Base Product Number	CSD25213
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	47mOhm @ 1A, 4.5V
Power Dissipation (Max)	1W (Ta)
Supplier Device Package	4-DSBGA (1x1)
Gate Charge (Qg) (Max) @ Vgs	2.9 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	478 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)