G3S12010BM

Global Power Technology-GPT

Product No:

G3S12010BM

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Package:

TO-247AB

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Description:

SIC SCHOTTKY DIODE 1200V 10A 3-P

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Mfr	Global Power Technology-GPT
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Cut Tape (CT)
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-247AB
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)	1200 V
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 5 A
Current - Average Rectified (Io) (per Diode)	19.8A (DC)