GT100N12K

Goford Semiconductor

Product No:

GT100N12K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

Description:

N120V,65A,RD<12M@10V,VTH2.5V~3.5

Quantity:

Delivery:

Payment:

In Stock : 2795

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.52

    $1.52

  • 10

    $1.2407

    $12.407

  • 100

    $0.964725

    $96.4725

  • 500

    $0.817741

    $408.8705

  • 1000

    $0.66614

    $666.14

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Product Information

Parameter Info

User Guide

Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 12mOhm @ 35A, 10V
Power Dissipation (Max) 75W (Tc)
Supplier Device Package TO-252
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 2911 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)