IRFD9110

Harris Corporation

Product No:

IRFD9110

Manufacturer:

Harris Corporation

Package:

4-DIP, Hexdip, HVMDIP

Batch:

-

Datasheet:

-

Description:

0.7A 100V 1.200 OHM P-CHANNEL

Quantity:

Delivery:

Payment:

In Stock : 16134

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 807

    $0.3515

    $283.6605

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Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number IRFD9110
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.2Ohm @ 420mA, 10V
Power Dissipation (Max) 1.3W (Ta)
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)