MT3S111TU,LF

Toshiba Semiconductor and Storage

Product No:

MT3S111TU,LF

Package:

UFM

Batch:

-

Datasheet:

-

Description:

RF SIGE NPN BIPOLAR TRANSISTOR N

Quantity:

Delivery:

Payment:

In Stock : 3328

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5605

    $0.5605

  • 10

    $0.494

    $4.94

  • 25

    $0.44612

    $11.153

  • 100

    $0.39026

    $39.026

  • 250

    $0.342456

    $85.614

  • 500

    $0.302632

    $151.316

  • 1000

    $0.238916

    $238.916

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Gain 12.5dB
Series -
Package Tape & Reel (TR)
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Product Status Active
Transistor Type NPN
Base Product Number MT3S111
Operating Temperature 150°C (TJ)
Frequency - Transition 10GHz
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 6V