MT3S113P(TE12L,F)

Toshiba Semiconductor and Storage

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MT3S113P(TE12L,F)

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Package:

PW-MINI

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Description:

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

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Mfr	Toshiba Semiconductor and Storage
Gain	10.5dB
Series	-
Package	Tape & Reel (TR)
Power - Max	1.6W
Mounting Type	Surface Mount
Package / Case	TO-243AA
Product Status	Active
Transistor Type	NPN
Base Product Number	MT3S113
Operating Temperature	150°C (TJ)
Frequency - Transition	7.7GHz
Supplier Device Package	PW-MINI
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Current - Collector (Ic) (Max)	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)	5.3V