NTD5862NT4G
onsemi
Product No:
NTD5862NT4G
Manufacturer:
Package:
DPAK
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 9
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
User Guide
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 45A, 10V |
| Power Dissipation (Max) | 115W (Tc) |
| Supplier Device Package | DPAK |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
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