RFD3N08LSM9A
Harris Corporation
Product No:
RFD3N08LSM9A
Manufacturer:
Package:
TO-252-3 (DPAK)
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 2683 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
833
$0.342
$284.886
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Product Information
Parameter Info
User Guide
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3A, 5V |
| Power Dissipation (Max) | 30W (Tc) |
| Supplier Device Package | TO-252-3 (DPAK) |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
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