SI2308BDS-T1-GE3
Vishay Siliconix
Product No:
SI2308BDS-T1-GE3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 60V 2.3A SOT23-3
Quantity:
Delivery:
Payment:
In Stock : 29466 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.5035
$0.5035
10
$0.4313
$4.313
100
$0.32243
$32.243
500
$0.253308
$126.654
1000
$0.195738
$195.738
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Base Product Number | SI2308 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
