SI2325DS-T1-GE3
Vishay Siliconix
Product No:
SI2325DS-T1-GE3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Batch:
-
Datasheet:
Description:
MOSFET P-CH 150V 530MA SOT23-3
Quantity:
Delivery:
Payment:
In Stock : 24066 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.9215
$0.9215
10
$0.8208
$8.208
100
$0.640015
$64.0015
500
$0.528694
$264.347
1000
$0.417382
$417.382
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Base Product Number | SI2325 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 750mW (Ta) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 530mA (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
