SIHF640S-GE3
Vishay Siliconix
Product No:
SIHF640S-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 200V 18A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 1548 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.9
$1.9
10
$1.5751
$15.751
100
$1.25362
$125.362
500
$1.060732
$530.366
1000
$0.900011
$900.011
2000
$0.85501
$1710.02
5000
$0.822871
$4114.355
10000
$0.795625
$7956.25
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHF640 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
