SIS110DN-T1-GE3
Vishay Siliconix
Product No:
SIS110DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 5.2A/14.2A PPAK
Quantity:
Delivery:
Payment:
In Stock : 5496 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.608
$0.608
10
$0.5263
$5.263
100
$0.36442
$36.442
500
$0.304494
$152.247
1000
$0.259141
$259.141
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIS110 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 4A, 10V |
| Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 14.2A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
