SISS30DN-T1-GE3
Vishay Siliconix
Product No:
SISS30DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Batch:
-
Datasheet:
Description:
MOSFET N-CH 80V 15.9A/54.7A PPAK
Quantity:
Delivery:
Payment:
In Stock : 15307 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.045
$1.045
10
$0.855
$8.55
100
$0.664905
$66.4905
500
$0.563616
$281.808
1000
$0.459116
$459.116
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Base Product Number | SISS30 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.25mOhm @ 10A, 10V |
| Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1666 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 15.9A (Ta), 54.7A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
