SIZ998BDT-T1-GE3
Vishay Siliconix
Product No:
SIZ998BDT-T1-GE3
Manufacturer:
Package:
8-PowerPair® (6x5)
Batch:
-
Datasheet:
-
Description:
DUAL N-CHANNEL 30-V (D-S) MOSFET
Quantity:
Delivery:
Payment:
In Stock : 18219 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.855
$0.855
10
$0.703
$7.03
100
$0.54644
$54.644
500
$0.463182
$231.591
1000
$0.377312
$377.312
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Configuration | 2 N-Channel (Dual), Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SIZ998 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 46.7nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 2130pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
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