SQ2301ES-T1_GE3
Vishay Siliconix
Product No:
SQ2301ES-T1_GE3
Manufacturer:
Package:
TO-236 (SOT-23)
Batch:
-
Datasheet:
Description:
MOSFET P-CH 20V 3.9A TO236
Quantity:
Delivery:
Payment:
In Stock : 5004 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.4845
$0.4845
10
$0.41705
$4.1705
100
$0.289845
$28.9845
500
$0.226328
$113.164
1000
$0.183968
$183.968
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Base Product Number | SQ2301 |
| Operating Temperature | -55°C ~ 175°C (TA) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.8A, 4.5V |
| Power Dissipation (Max) | 3W (Tc) |
| Supplier Device Package | TO-236 (SOT-23) |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
