SSM6N16FE,L3F

Toshiba Semiconductor and Storage

Product No:

SSM6N16FE,L3F

Package:

ES6

Batch:

-

Datasheet:

-

Description:

SMALL SIGNAL MOSFET N-CH X 2 VDS

Quantity:

Delivery:

Payment:

In Stock : 8265

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.342

    $0.342

  • 10

    $0.23845

    $2.3845

  • 100

    $0.120365

    $12.0365

  • 500

    $0.098154

    $49.077

  • 1000

    $0.072827

    $72.827

  • 2000

    $0.061275

    $122.55

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 150mW (Ta)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Vgs(th) (Max) @ Id 1.1V @ 100µA
Base Product Number SSM6N16
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Supplier Device Package ES6
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)