SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

Product No:

SSM6N16FUTE85LF

Package:

US6

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 20V 0.1A US6

Quantity:

Delivery:

Payment:

In Stock : 3914

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.456

    $0.456

  • 10

    $0.3382

    $3.382

  • 100

    $0.191235

    $19.1235

  • 500

    $0.126654

    $63.327

  • 1000

    $0.0971

    $97.1

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 200mW
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Vgs(th) (Max) @ Id 1.1V @ 100µA
Base Product Number SSM6N16
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Supplier Device Package US6
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C 100mA