TJ20A10M3(STA4,Q

Toshiba Semiconductor and Storage

Product No:

TJ20A10M3(STA4,Q

Manufacturer:

Package:

TO-220SIS

Batch:

Datasheet:

Description:

TJ20A10M3(STA4,Q

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tube
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	TJ20A10
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	90mOhm @ 10A, 10V
Power Dissipation (Max)	35W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)