TRS10A65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS10A65F,S1Q

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Package:

TO-220F-2L

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Description:

DIODE SIL CARB 650V 10A TO220F

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Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Product Status	Active
Base Product Number	TRS10A65
Capacitance @ Vr, F	36pF @ 650V, 1MHz
Supplier Device Package	TO-220F-2L
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	175°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 10 A