TRS10V65H,LQ
Toshiba Semiconductor and Storage
Product No:
TRS10V65H,LQ
Manufacturer:
Package:
4-DFN-EP (8x8)
Batch:
-
Datasheet:
-
Description:
G3 SIC-SBD 650V 10A DFN8X8
Quantity:
Delivery:
Payment:
In Stock : 5379 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.7455
$2.7455
10
$2.30565
$23.0565
100
$1.86523
$186.523
500
$1.658016
$829.008
1000
$1.41968
$1419.68
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Product Status | Active |
| Capacitance @ Vr, F | 649pF @ 1V, 1MHz |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 10 A |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
