TRS12E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS12E65F,S1Q

Package:

TO-220-2L

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 12A TO220-2L

Quantity:

Delivery:

Payment:

In Stock : 473

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.2325

    $2.2325

  • 10

    $1.8544

    $18.544

  • 100

    $1.476205

    $147.6205

  • 500

    $1.249117

    $624.5585

  • 1000

    $1.059868

    $1059.868

  • 2000

    $1.006876

    $2013.752

  • 5000

    $0.969019

    $4845.095

  • 10000

    $0.936938

    $9369.38

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number TRS12E65
Capacitance @ Vr, F 65pF @ 650V, 1MHz
Supplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A