TRS20N65FB,S1F(S

Toshiba Semiconductor and Storage

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TRS20N65FB,S1F(S

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TO-247

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Description:

DODE SCHOTTKY 650V TO247

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Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Base Product Number	TRS20N65
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-247
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Operating Temperature - Junction	175°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Current - Average Rectified (Io) (per Diode)	10A (DC)