TRS6E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS6E65F,S1Q

Package:

TO-220-2L

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 6A TO220-2L

Quantity:

Delivery:

Payment:

In Stock : 352

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.565

    $2.565

  • 10

    $2.1565

    $21.565

  • 100

    $1.74439

    $174.439

  • 500

    $1.550552

    $775.276

  • 1000

    $1.327663

    $1327.663

  • 2000

    $1.250134

    $2500.268

  • 5000

    $1.199375

    $5996.875

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number TRS6E65
Capacitance @ Vr, F 22pF @ 650V, 1MHz
Supplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 30 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 6A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 6 A