TSM089N08LCR RLG

Taiwan Semiconductor Corporation

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TSM089N08LCR RLG

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8-PDFN (5x6)

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Description:

MOSFET N-CH 80V 67A 8PDFN

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Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	TSM089
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	8.9mOhm @ 12A, 10V
Power Dissipation (Max)	83W (Tc)
Supplier Device Package	8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	6119 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	67A (Tc)