TSM900N10CH X0G

Taiwan Semiconductor Corporation

Product No:

TSM900N10CH X0G

Package:

TO-251 (IPAK)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 15A TO251

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Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number TSM900
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 90mOhm @ 5A, 10V
Power Dissipation (Max) 50W (Tc)
Supplier Device Package TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)