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VS-3C04ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C04ET07T-M3

Package:

TO-220AC

Batch:

-

Datasheet:

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

Delivery:

Payment:

In Stock : 2448

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.223

    $2.223

  • 10

    $1.84775

    $18.4775

  • 100

    $1.4706

    $147.06

  • 500

    $1.244367

    $622.1835

  • 1000

    $1.05583

    $1055.83

  • 2000

    $1.003048

    $2006.096

  • 5000

    $0.965333

    $4826.665

  • 10000

    $0.933375

    $9333.75

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Product Information

Parameter Info

User Guide

Mfr Vishay General Semiconductor - Diodes Division
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Capacitance @ Vr, F 175pF @ 1V, 1MHz
Supplier Device Package TO-220AC
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 25 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 4 A