WNSC2D04650TJ

WeEn Semiconductors

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WNSC2D04650TJ

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Package:

5-DFN (8x8)

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Description:

DIODE SIL CARBIDE 650V 4A 5DFN

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Mfr	WeEn Semiconductors
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tape & Reel (TR)
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Product Status	Active
Base Product Number	WNSC2
Capacitance @ Vr, F	125pF @ 1V, 1MHz
Supplier Device Package	5-DFN (8x8)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Operating Temperature - Junction	175°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 4 A