IPAN60R600P7SXKSA1

Infineon Technologies

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IPAN60R600P7SXKSA1

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PG-TO220 Full Pack

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Description:

MOSFET N-CH 650V 6A TO220

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Mfr	Infineon Technologies
Series	CoolMOS™ P7
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 80µA
Base Product Number	IPAN60
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Power Dissipation (Max)	21W (Tc)
Supplier Device Package	PG-TO220 Full Pack
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	363 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)