IPB04N03LAG

Infineon Technologies

Product No:

IPB04N03LAG

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

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Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 2V @ 60µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.9mOhm @ 55A, 10V
Power Dissipation (Max) 107W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V
Drain to Source Voltage (Vdss) 25 V
Input Capacitance (Ciss) (Max) @ Vds 3877 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)