Home / Single FETs, MOSFETs / IPB120N04S401ATMA1

IPB120N04S401ATMA1

Infineon Technologies

Product No:

IPB120N04S401ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 120A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 2229

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.104

    $4.104

  • 10

    $3.6822

    $36.822

  • 100

    $3.01682

    $301.682

  • 500

    $2.568173

    $1284.0865

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif11 Certif10

Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 140µA
Base Product Number IPB120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Power Dissipation (Max) 188W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)