IPB65R190C7ATMA2
Infineon Technologies
Product No:
IPB65R190C7ATMA2
Manufacturer:
Package:
PG-TO263-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 13A TO263-3
Quantity:
Delivery:
Payment:
In Stock : 1383 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.1825
$3.1825
10
$2.6752
$26.752
100
$2.1641
$216.41
500
$1.923598
$961.799
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ C7 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 290µA |
| Base Product Number | IPB65R190 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.7A, 10V |
| Power Dissipation (Max) | 72W (Tc) |
| Supplier Device Package | PG-TO263-3 |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
