IPD079N06L3GATMA1

Infineon Technologies

Product No:

IPD079N06L3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-311

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 50A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 2447

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.007

    $1.007

  • 10

    $0.82175

    $8.2175

  • 100

    $0.63935

    $63.935

  • 500

    $0.541918

    $270.959

  • 1000

    $0.441456

    $441.456

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Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 34µA
Base Product Number IPD079N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 7.9mOhm @ 50A, 10V
Power Dissipation (Max) 79W (Tc)
Supplier Device Package PG-TO252-3-311
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)