IPD110N12N3GATMA1

Infineon Technologies

Product No:

IPD110N12N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 120V 75A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 9620

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.28

    $2.28

  • 10

    $2.0501

    $20.501

  • 100

    $1.64749

    $164.749

  • 500

    $1.353541

    $676.7705

  • 1000

    $1.121504

    $1121.504

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Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3V @ 83µA (Typ)
Base Product Number IPD110
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 75A, 10V
Power Dissipation (Max) 136W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 4310 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)