Infineon Technologies
Product No:
IPD110N12N3GATMA1
Manufacturer:
Package:
PG-TO252-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 120V 75A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.28
$2.28
10
$2.0501
$20.501
100
$1.64749
$164.749
500
$1.353541
$676.7705
1000
$1.121504
$1121.504
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Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 83µA (Typ) |
Base Product Number | IPD110 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 75A, 10V |
Power Dissipation (Max) | 136W (Tc) |
Supplier Device Package | PG-TO252-3 |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
Drain to Source Voltage (Vdss) | 120 V |
Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 60 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |