IPD5N25S3430ATMA1

Infineon Technologies

Product No:

IPD5N25S3430ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 250V 5A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 3969

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.9975

    $0.9975

  • 10

    $0.8911

    $8.911

  • 100

    $0.694735

    $69.4735

  • 500

    $0.573895

    $286.9475

  • 1000

    $0.453074

    $453.074

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Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 4V @ 13µA
Base Product Number IPD5N25
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V
Power Dissipation (Max) 41W (Tc)
Supplier Device Package PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)