IPI029N06NAKSA1

Infineon Technologies

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IPI029N06NAKSA1

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Package:

PG-TO262-3

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Description:

MOSFET N-CH 60V 24A/100A TO262-3

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Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 75µA
Base Product Number	IPI029
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.9mOhm @ 100A, 10V
Power Dissipation (Max)	3W (Ta), 136W (Tc)
Supplier Device Package	PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 100A (Tc)