Infineon Technologies
Product No:
IPI100N06S3L04XK
Manufacturer:
Package:
PG-TO262-3
Batch:
-
Description:
MOSFET N-CH 55V 100A TO262-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.216
$1.216
10
$1.04215
$10.4215
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Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2.2V @ 150µA |
Base Product Number | IPI100N |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 80A, 10V |
Power Dissipation (Max) | 214W (Tc) |
Supplier Device Package | PG-TO262-3 |
Gate Charge (Qg) (Max) @ Vgs | 362 nC @ 10 V |
Drain to Source Voltage (Vdss) | 55 V |
Input Capacitance (Ciss) (Max) @ Vds | 17270 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |