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IPP65R099CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R099CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 473

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.764

    $6.764

  • 10

    $5.795

    $57.95

  • 100

    $4.829515

    $482.9515

  • 500

    $4.261339

    $2130.6695

  • 1000

    $3.835198

    $3835.198

  • 2000

    $3.593726

    $7187.452

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Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Base Product Number IPP65R099
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 99mOhm @ 12.5A, 10V
Power Dissipation (Max) 127W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)