IPT015N10NF2SATMA1
Infineon Technologies
Product No:
IPT015N10NF2SATMA1
Manufacturer:
Package:
PG-HSOF-8
Batch:
-
Datasheet:
-
Description:
MOSFET
Quantity:
Delivery:
Payment:
In Stock : 1546 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$6.023
$6.023
10
$5.0597
$50.597
100
$4.093075
$409.3075
500
$3.638272
$1819.136
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | StrongIRFET™ 2 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 267µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 150A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Supplier Device Package | PG-HSOF-8 |
| Gate Charge (Qg) (Max) @ Vgs | 242 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 315A (Tc) |
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