Home / Single FETs, MOSFETs / IPTG111N20NM3FDATMA1

IPTG111N20NM3FDATMA1

Infineon Technologies

Product No:

IPTG111N20NM3FDATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOG-8-1

Batch:

-

Datasheet:

-

Description:

TRENCH >=100V PG-HSOG-8

Quantity:

Delivery:

Payment:

In Stock : 411

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.6

    $7.6

  • 10

    $6.5132

    $65.132

  • 100

    $5.427635

    $542.7635

  • 500

    $4.789102

    $2394.551

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif11 Certif10

Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™ 3
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Gull Wing
Product Status Active
Vgs(th) (Max) @ Id 4V @ 267µA
Base Product Number IPTG111N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 11.1mOhm @ 96A, 10V
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Supplier Device Package PG-HSOG-8-1
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta), 108A (Tc)